click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? ultra ? low ? drift ? | ? v ? gs1 \ 2 ? / ? t| ? 20v/c ? ultra ? low ? leakage ? i g ? = ? 80fa ? typ. ? low ? noise ? e n ? = ? 70nv/ hz ? typ. ? low ? capacitance ? c iss ? = ? 3pf ? max. ? absolute ? maximum ? ratings ? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +150c ? operating ? junction ? temperature ? +150c ? maximum ? voltage ? and ? current ? for ? each ? transistor ? ? ? note ? 1 ? \ v gss ? gate ? voltage ? to ? drain ? or ? source ? 40v ? \ v dso ? drain ? to ? source ? voltage ? 40v ? \ i g ( f ) ? gate ? forward ? current ? 10ma ? \ i g ? gate ? reverse ? current ? 10a ? maximum ? power ? dissipation ? device ? dissipation ? @ ? free ? air ? ? ? total ????????????????? 400mw ? @ ? +125c ? ? matching ? characteristics ? @ ? 25c ? unless ? otherwise ? noted symbol ? characteristics ? value ? units ? conditions ? | ? v ? gs1 \ 2 ? / ? t| ? max. ? drift ? vs. ? temperature ? 20 ? v/c ? v dg =10v, ? i d =30a ? t a = \ 55c ? to ? +125c ? | ? v ? gs1 \ 2 ? | ? max. ? offset ? voltage ? 25 ? mv ? v dg =10v, ? i d= 30a ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristics ? min. ? typ. ? max. ? units ? conditions ? bv gss ? breakdown ? voltage ? 40 ? 60 ? \\? v ? v ds ? = ? 0 ?????????????????? i d =1na ? bv ggo ? gate \ to \ gate ? breakdown ? 40 ? \\? \\? v ? ?????? i ? g = ? 1na ??????????????? i d = ? 0 ??????????????? i s = ? 0 ? ? y fss ? transconductance ? full ? conduction ? ? 70 ? ? 300 ? ? 500 ? ? mho ? ? v dg = ? 10v ????????? v gs = ? 0v ?????? f ? = ? 1khz ? y fs ? typical ? operation ? 50 ? 100 ? 200 ? mho ? ????? v dg = ? 10v ????????? i d = ? 30a ???? f ? = ? 1khz ? |y fs1 \ 2 ? / ? y ? fs | ? mismatch ? \\? 0.6 ? 3 ? % ?? ? i dss ? drain ? current ? full ? conduction ? ? 0.5 ? ? \\? ? 10 ? ? ma ? ? v dg = ? 10v ?????????????? v gs = ? 0v ? |i dss1 \ 2 ? / ? i dss | ? mismatch ? at ? full ? conduction ? \\? 1 ? 5 ? % ?? ? v gs (off) ? or ? v p ? gate ? voltage ? pinchoff ? voltage ? ? 0.6 ? ? 2 ? ? 4.5 ? ? v ? ? v ds = ? 10v ??????????????? i d = ? 1na ? v gs (on) ? operating ? range ? \\? \\? 4 ? v ? ?????????????? v ds =10v ????????????????? i d =30a ? ? \ i g max. ? gate ? current ? operating ? ? \\? ? \\? ? 0.1 ? ? pa ? ? v dg = ? 10v ? i d = ? 30a ? \ i g max. ? high ? temperature ? \\? \\? 0.1 ? na ? t a = ? +125c ? \ i gss max. ? at ? full ? conduction ? \\? \\? 0.2 ? pa ? v ds =0 ? \ i gss max. ? high ? temperature ? 5 ? 5 ? 0.5 ? na ? v gs = ? 0v, ? v gs = ?\ 20v, ? t a = ? +125c ? i ggo ? gate \ to \ gate ? leakage ? \\? 1 ? \\? pa ? v gg = ? 20v ? ? y oss ? output ? conductance ? full ? conduction ? ? \\? ? \\? ? 5 ? ? mho ? ? v dg = ? 10v ?????????????? v gs = ? 0v ? y os ? operating ? \\? \\? 0.5 ? mho ? v dg = ?? 10v ???????????? i d = ? 30a ? ? cmr ? common ? mode ? rejection ? \ 20 ? log ? | ? v ? gs1 \ 2 / ? v ? ds | ? ? \\? ? 90 ? ? \\? ? db ? ? ? v ds ? = ? 10 ? to ? 20v ???????? i d =30a ? \ 20 ? log ? | ? v ? gs1 \ 2 / ? v ? ds | ? \\? 90 ? \\? ? v ds ? = ? 5 ? to ? 10v ???????? i d =30a ? ? nf ? noise ? figure ? ? \\? ? \\? ? 1 ? ? db ? v ds = ? 10v ?????? v gs = ? 0v ??????? r g = ? 10m ? f= ? 100hz ??????????? nbw= ? 6hz ? e n ? voltage ? \\? 20 ? 70 ? nv/ hz ? v ds =10v ??? i d =30a ??? f=10hz ?? nbw=1hz ? ? c iss ? capacitance ? input ? ? \\? ? \\? ? 3 ? ? pf ? ? v ds = ? 10v, ?? v gs = ? 0v, ?? f= ? 1mhz ? c rss ? reverse ? transfer ? \\? \\? 1.5 ? pf ? v ds = ? 10v, ?? v gs = ? 0v, ?? f= ? 1mhz ? c dd ? drain \ to \ drain ? \\? \\? 0.1 ? pf ? v ds = ? 10v, ??? i d =30a ? ls832 monolithic dual n-channel jfet linear s y stems ultra low leaka g e low drift monolithic dual jfet ls832 applications: ? wideband differential amps ? high-speed,temp-compensated single- ended input amps ? high-speed comparators ? impedance converters and vibrations detectors. the ls832 is a high-performance monolithic dual jfet featuring extremely lo w noise, tight offset voltage and low drift over temperat ure specifications, and is targeted for use in a wide range of precision instrumentation applications . the ls832 features a 25- mv offset and 20-v/c drift. the 8 pin p-dip and 8 pin soic provide ease of manufacturing, and the symm etrical pinout prevents improper orientation. (see packaging information). available packages: ls832 / ls832 in pdip & soic ls832 / ls832 available as bare die please contact micross for full p acka g e and die dimensions note 1 ? these ratings are limiting values above which the serviceability of any semiconductor may be impaired tel: +44 1603 788967 email: chipcomponents@micross.com web: http://www.micross.com/distribution pdip & soic (top view)
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